![Dr Harry Dymond](https://research-information.bris.ac.uk/ws/files/289136637/Harry_Dymond_greyscale.jpg)
Dr Harry Dymond
MEng(Bristol), PhD(Bristol)
Expertise
Current positions
Senior Research Associate in Power Electronics
School of Electrical, Electronic and Mechanical Engineering
Contact
Press and media
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Research interests
Wide bangap GaN power transistors can switch extremely quickly, e.g. current transitions in excess of 10 A/ns and voltage transitions in excess of 100 V/ns, but this presents a challenge in terms of keeping a system using such GaN transistors electromagnetically "quiet". With conventional gate driving techniques, to make transistors switch more "quietly", the transitions are slowed and losses increased (efficiency decreased). I am developing advanced gate driving techniques for wide bandgap GaN power transistors, aiming to eliminate any tradeoff between converter efficiency and electromagnetic compatibility.
Projects and supervisions
Research projects
Pulse quietening at source for higher-frequency power and signal switching
Principal Investigator
Role
Researcher
Managing organisational unit
Department of Electrical & Electronic EngineeringDates
17/06/2013 to 16/06/2018
Publications
Recent publications
19/08/2022Probing Techniques for GaN Power Electronics
PCIM Europe 2022
Use of an NSGA-II Genetic Algorithm and Active Gate Driving to Improve Simulated GaN Power Electronic Switching Waveforms
PCIM Europe 2022
Investigating GaN power device double-pulse testing efficacy in the face of VTH-shift, dynamic Rdson, and temperature variations
2021 IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Fast temperature sensing for GaN power devices using E-field probes
2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL)
Full custom design of an arbitrary waveform gate driver with 10 GHz waypoint rates for GaN FETs
IEEE Transactions on Power Electronics