Multi-project GaN Wafer Run: RF Circuit Technologies for Resilient, Agile & Efficient 6G connectivity

Funded by the HASC Federated Hub MARIANNE proposes to enrich the research remit of the Hub in All Spectrum Connectivity in the field of analogue RF device and circuit technology.

With some 6.5 billion smart phones currently connected across the globe, and the number of licensed cellular IoT connections expected to reach 5.8 billion by 2030, significant challenges are emerging in terms of spectrum congestion below 6GHz as well as energy consumption.

The highly favourable amalgamated antenna size and propagation characteristics for compact devices compounds this problem below 6GHz, as well as the poor DC to RF conversion efficiency of RF power amplifiers.

Spectrum regulators, such as Ofcom in the UK, are proactively considering spectrum sharing as an alternative means to manage spectrum as well as the use of spectrum between 7 and 24GHz to enhance channel availability. However, poor receiver design in terms of interference accommodation (blocking performance) limits the potential benefits.

The University of Bristol (UoB), University College London (UCL) and the Compound Semiconductor Application (CSA) Catapult propose to enrich the research remit of the Hub in All Spectrum Connectivity in the field of analogue RF device and circuit technology.

Jointly, we will deliver novel solutions for the UK in the field of blocker resilient receiver components, compact delay elements for interference cancellers and highly efficient integrated RF power amplifiers and antenna facets. With GaN-based technology offering highly desirable operational characteristics for RF receiver and transmitter solutions, laboratory-based demonstrators will be fabricated through a commercial Multi-project GaN Wafer Run: RF Circuit Technologies for Resilient, Agile & Efficient 6G connectivity (MARIANNE).

DSIT’s Wireless Infrastructure Strategy is to manage spectrum for the benefit of all, with MARIANNE’s technologies providing timely innovations for both our future networks and devices working towards this goal. In addition, the aforementioned technologies are key enablers for high-performance 6G connectivity and Future Open Networks. Furthermore, MARIANNE also dovetails with DSIT’s semiconductor strategy in the growth of GaN design and foundry capabilities in the UK.